Browsing by Author "Elagoz, Sezai"
Now showing items 1-10 of 10
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Capacitance-conductance-frequency characteristics of Au/Ni/n-GaN/undoped GaN Structures
Dogan, Hulya; Yildirim, Nezir; Orak, Ikram; Elagoz, Sezai; Turut, Abdulmecit (ELSEVIER SCIENCE BV, 2015)Frequency-dependent capacitance (C) and conductance (C) characteristics of the Au/Ni/n-GaN/undoped GaN device have been investigated in the reverse bias voltage range of 0.00-0.40 V. The GaN films have been epitaxially ... -
Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications
Demir, Ilkay; Altuntas, Ismail; Bulut, Baris; Ezzedini, Maher; Ergun, Yuksel; Elagoz, Sezai (IOP PUBLISHING LTD, 2018)We present growth and characterization studies of highly n-doped InGaAs epilayers on InP substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum cascade laser applications. We have introduced ... -
Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy
Demir, Ilkay; Robin, Yoann; McClintock, Ryan; Elagoz, Sezai; Zekentes, Konstantinos; Razeghi, Manijeh (WILEY-V C H VERLAG GMBH, 2017)AlN layers have been grown on 200 nm period of nano-patterned Si (111) substrates by cantilever epitaxy and compared with AlN layers grown by maskless lateral epitaxial overgrowth (LEO) on micropatterned Si (111) substrates. ... -
The effects of two-stage HT-GaN growth with different V/III ratios during 3D-2D transition
Altuntas, Ismail; Demir, Ilkay; Kasapoglu, Ahmet Emre; Mobtakeri, Soheil; Gur, Emre; Elagoz, Sezai (IOP PUBLISHING LTD, 2018)The aim of the study is to understand the effects of two stages of HT-GaN growth with different V/III ratios on optical, chemical and structural characteristics of the HT-GaN layer. In addition, the effects of two-stage ... -
Growth of InGaAs/InAlAs superlattices by MOCVD and precise thickness determination via HRXRD
Demir, Ilkay; Elagoz, Sezai (GAZI UNIV, 2016)In this study, we report the growth studies of InGaAs/InAlAs superlattices (SLs) with thin layer thicknesses which will be used for quantum cascade laser (QCL) structures, grown by Metal Organic Chemical Vapor Deposition ... -
High brightness ultraviolet light-emitting diodes grown on patterned silicon substrate
Robin, Yoann; Ding, Kai; Demir, Ilkay; McClintock, Ryan; Elagoz, Sezai; Razeghi, Manijeh (ELSEVIER SCI LTD, 2019)We report on the fabrication of high brightness AlGaN-based ultraviolet light emitting diodes (UV-LED) on patterned silicon. Using the lateral epitaxial overgrowth approach, we demonstrate the growth of a 6 mu m thick AIN ... -
Interruption time effects on InGaAs/InAlAs superlattices of quantum cascade laser structures grown by MOCVD
Demir, Ilkay; Elagoz, Sezai (ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2016)We report the growth of high quality InGaAs/InAlAs quantum cascade laser (QCL) structure which composed of superlattices (SLs) and the effects of interruption time between each layer of the SL structure. Inserting an ... -
Structural and electrical properties of nitrogen-doped ZnO thin films
Tuzemen, Ebru Senadim; Kara, Kamuran; Elagoz, Sezai; Takci, Deniz Kadir; Altuntas, Ismail; Esen, Ramazan (ELSEVIER SCIENCE BV, 2014)ZnO and nitrogen-doped ZnO thin films were prepared onto glass substrate by pulsed filtered cathodic vacuum arc deposition (PFCVAD) system at room temperature. The influence of doping on the structural, electrical and ... -
Temperature-dependent electrical transport properties of (Au/Ni)/n-GaN Schottky barrier diodes
Dogan, Hulya; Elagoz, Sezai (ELSEVIER SCIENCE BV, 2014)The temperature-dependent electrical properties of (Au/Ni)n-GaN Schottky barrier diodes (SBDs)have been investigated in the wide temperature range of 40-400 K. The analysis of the main electrical characteristics such as ... -
V/III ratio effects on high quality InAlAs for quantum cascade laser structures
Demir, Ilkay; Elagoz, Sezai (ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2017)In this study we report the VIII ratio effects on growth, structural, optical and doping characteristics of low growth rate (similar to 1 angstrom/s) heteroepitaxial Metal Organic Chemical Vapor Deposition (MOCVD) grown ...